Sensitivity of Field-Effect Transistor-Based Terahertz Detectors
نویسندگان
چکیده
منابع مشابه
Plasmonic and bolometric terahertz detection by graphene field-effect transistor
transistor A. V. Muraviev, S. L. Rumyantsev, G. Liu, A. A. Balandin, W. Knap, and M. S. Shur ECSE and PAPA Department, Rensselaer Polytechnic Institute, Troy, New York 12180, USA Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russia Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–River...
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ژورنال
عنوان ژورنال: Sensors
سال: 2021
ISSN: 1424-8220
DOI: 10.3390/s21092909